ev3皇室战争x连弩怎么破做

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EV3入门教程第五课
主要内容1、EV3循环中断模块
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顶~~~~~~~~~~~~
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讲解的很清晰,顶!
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创客空间&&在哪里啊&&挺期待的
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讲解的很清晰,顶!
怎么找第一课?
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怎么找第一课?
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老哥,你说的 drt,是什么啊 ,能给我一份不??
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不能看,纯支持
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> GS0I (GSI TECHNOLOGY) 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs PDF资料下载
PinPin NameI/ODescriptionTCKTest ClockInClocks all TAP events. All inputs are captured on the rising edge of TCK and all outputs propagate from the falling edge of TCK.The TMS input is sampled on the rising edge of TCK. This is the command input for the TAP controller state machine. An undriven TMS input will produce the same result as a logic one input level.The TDI input is sampled on the rising edge of TCK. This is the input side of the serial registers placed between TDI and TDO. The register placed between TDI and TDO is determined by the state of the TAP Controller state machine and the instruction that is currently loaded in the TAP Instruction Register (refer to the TAP Controller State Diagram). An undriven TDI pin will produce the same result as a logic one input level.Output that is active depending on the state of the TAP state machine. Output changes in response to the falling edge of TCK. This is the output side of the serial registers placed between TDI and TDO.TMSTest Mode SelectInTDITest Data InInTDOTest Data OutOutNote:This device does not have a TRST (TAP Reset) pin. TRST is optional in IEEE 1149.1. The Test-Logic-Reset state is entered while TMS is held high for five rising edges of TCK. The TAP Controller is also reset automaticly at power-up. GS/36E-250/225/200/166/150/133Specifications cited are subject to change without notice. For latest documentation see .Rev:
4/200521/33 2003, GSI TechnologyJTAG Port RegistersOverviewThe various JTAG registers, refered to as Test Access Port orTAP Registers, are selected (one at a time) via the sequences of 1s and 0s applied to TMS as TCK is strobed. Each of the TAP Registers is a serial shift register that captures serial input data on the rising edge of TCK and pushes serial data out on the next
falling edge of TCK. When a register is selected, it is placed between the TDI and TDO pins.Instruction RegisterThe Instruction Register holds the instructions that are executed by the TAP controller when it is moved into the Run, Test/Idle, or the various data register states. Instructions are 3 bits long. The Instruction Register can be loaded when it is placed between the TDI and TDO pins. The Instruction Register is automatically preloaded with the IDCODE instruction at power-up or whenever the controller is placed in Test-Logic-Reset state.Bypass RegisterThe Bypass Register is a single bit register that can be placed between TDI and TDO. It allows serial test data to be passed through the RAM’s
to another device in the scan chain with as little delay as possible.Boundary Scan RegisterThe Boundary Scan Register is a collection of flip flops that can be preset by the logic level found on the RAM’s input or I/O pins. The flip flops are then daisy chained together so the levels found can be shifted serially out of the JTAG Port’s TDO pin.
The Boundary Scan Register also
includes a number of place holder flip flops (always set to a logic 1). The relationship between the device pins and the bits in the Boundary Scan Register is described in the Scan Order Table following. The Boundary Scan Register, under the control of the TAP Controller, is loaded with the contents of the RAMs I/O ring when the controller is in Capture-DR state and then is placed between the TDI and TDO pins when the controller is moved to Shift-DR state. SAMPLE-Z, SAMPLE/PRELOAD and EXTEST instructions can be used to activate the Boundary Scan Register.
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
相关代理商/技术参数
制造商:GSI 制造商全称:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
制造商:GSI 制造商全称:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
制造商:GSI 制造商全称:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
制造商:GSI 制造商全称:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
制造商:GSI 制造商全称:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
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