Improvement of Air Trap Defects of Power Buttons Based on Flow Simulation of Moldflow--《China Plastics》2013年03期
Improvement of Air Trap Defects of Power Buttons Based on Flow Simulation of Moldflow
HONG Jianming (School of Mechanical and Electrical Engineering,Shenzhen Polytechnic,Shenzhen 518055,China)
Taking the design of TV power buttons as an example,the formation of air trap defects was analyzed with the help of Moldflow software in simulating the region of air traps generated in the flow process.The runner system of the injection mould was improved so as to eliminate the air trap defects in the surface of the button.As a result,the molding was improved and the mass production of the injection was enhanced.
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【Citations】
Chinese Journal Full-text Database
Hong Jianming (School of Mechanical and Electrical Engineering,Shenzhen Polytechnic,Shenzhen 518055,China);[J];Engineering Plastics A2009-07
QIAN Yu-qiang~1 SUN You-song~1 XIAO Xiao-ting~1 YANG Guo-hua~2 (1.Faculty of Electromechanical Eng.,Guangdong University of Technology,Guangzhou .Guangzhou GRG Lamko Mold Manufacturing Co.,Ltd.,Guangzhou 510000,China);[J];China Plastics I2006-12
【Co-citations】
Chinese Journal Full-text Database
Ma Keming, Liu Hong (Department of Material Engineering, Shenyang Institute of Aeronautical Engineering, Shenyang 110034, China);[J];Engineering Plastics A2005-11
Zuo Daping 1,2, Zhang Yihua 1 , Rui Yulong 1(1.Nanjng University of Aeronautics and Astronautics, Nanjing 210016, C2. Zhangjiajie Engineering Vocational and Technical College, Zhangjiajie 420017, China);[J];Engineering Plastics A2005-12
Chen Jiping,Ding Zhiping(School of Mechanical Engineering,Hunan University of Technology,Zhuzhou 412008,China);[J];Engineering Plastics A2006-05
Zheng Xiaopei,Lu Shufen,Wang Lixia,Shen Changyu(NERC for Appt,Zhengzhou University,Zhengzhou 450002,China);[J];Engineering Plastics A2006-07
Yu Fufang, Lin Yongnan, Xie Linjun (Department of Electromechanical and Automation Engineering,Fujian University of Technology,Fuzhou 350014, China);[J];Engineering Plastics A2006-09
Zhou Huangwei, Yan Zheng (Colledge of Polymer Science and Engineering, Sichuan University, Chengdu 610065, China);[J];Engineering Plastics A2006-11
Yu Fufang, Xie Yunlong, Liu Qiong (Department of Electromechanical and Automation Engineering, Fujian University of Technology, Fuzhou 350014, China);[J];Engineering Plastics A2006-11
Yang Zhiqiang(College of Communications,Zhejiang Normal University, Jinhua 321019, China)Wang Jingbo(Shandong Broadcast & TV Newspaper, Jinan 250011, China);[J];Engineering Plastics A2007-02
Chen Jiping, Ding Zhiping(School of Mechanical Engineering, Hunan University of Technology, Zhuzhou 412008, China);[J];Engineering Plastics A2007-03
Lin Yongnan,Yu Fufang,Wang Xuelian(Department of Electromechanical and Automation Engineering,Fujian University of Technology,Fuzhou 350014,China);[J];Engineering Plastics A2007-07
China Proceedings of conference Full-text Database
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TONG Yu DING Dan WEN Peng-fei ZHAI Peng-cheng (School of Sic. , WUT, Wuhan 430070, China);[A];[C];2006
LIU Huan,CUI Li,WANG Ya-li,GUO Zhi-zhong (Electromechanical project academy of Hainan University, Hainan danzhou 571737);[A];[C];2008
【Secondary Citations】
Chinese Journal Full-text Database
Shen Changyu, Li Haimei (APFT NERC, Zhengzhou University 450002);[J];Engineering Plastics A2001-02
Xiao Changjiang, Liu Chuntai, Shen Changyu (NERC of APPT, Zhengzhou University, Zhengzhou 450002, China);[J];Engineering Plastics A2003-03
SHEN Chang
, ZHAI Ming
, CHEN Jing
, LIU Chun
NERC for Mold & Die, Zhengzhou University of Technology, Zhengzhou 450002, C
Engineering Mechanics D[J];POLYMERIC MATERIALS SCIENCE & CNGINEERING;2000-01
Guo Zhiying
Doctoral C State Key Laboratory of Mould Tech., HUST, Wuhan 430074,
Li D[J];JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY;2000-08
LI Hai-mei, SHEN Chang-yu, CHEN Jing-bo, DONG Bin-bin
(NERC of Plastic and Rubber Mold & Die,Zhengzhou University of Technology,Zhengzhou 450002,China);[J];JOURNAL OF ZHENGZHOU UNIVERSITY OF TECHNOLOGY;1999-02
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A Thesis Submitted in Partial Fulfillment of the Requirements
For the Degree of Master of Engineering
Write Performance Optimization on TRAP3
Candidate :
Computer Architecture
Supervisor:
Chen Jianxi
Huazhong University of Science and Technology
Wuhan, Hubei 430074, P. R. China
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数据丢失将给个人和企业造成巨大损失，数据存储的高可靠性和高安全性成了
关注的重点。磁盘阵列在空间维度对数据进行保护，避免磁盘失效造成数据丢失，
连续数据保护可以在时间维度对数据进行保护，避免病毒攻击、操作失误等造成数
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是磁盘阵列与连续数据保护的融合，是一种全方位的数据保护策略。
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正在加载中，请稍后...Defect control and denuded trap zones in the 3-5 semiconductors
Title:Defect control and denuded trap zones in the 3-5 semiconductors
Affiliation:AA(Carnegie-Mellon Univ., Pittsburgh, PA.), AB(Carnegie-Mellon Univ., Pittsburgh, PA.)
Publication:Final Report, 1 May 1986 - 31 Aug. 1989 Carnegie-Mellon Univ., Pittsburgh, PA. Dept. of Electrical and Computer Engineering.
Publication Date:10/1989
Category:Solid-State Physics
NASA/STI Keywords:Annealing, Bipolar Transistors, Charge Carriers, Diffusion, Electron Capture, Holes (Electron Deficiencies), Molecular Beam Epitaxy, N-Type Semiconductors, P-Type Semiconductors, Wafers, Antimony, Beryllium, Charged Particles, Correlation, Defects, Electron Density (Concentration), Gallium Arsenides, Indium, Silicon, Trapped Particles
Bibliographic Code:
The effects of a variety of different treatments on the diffusion
lengths in GaAs wafers were investigated. Sealed ampule proximity-capped
anneals of 16 hours at 950 C were found to increase minority carrier
(hole) diffusion lengths in 1 x 10 to the 17th power Si doped GaAs from
initial values of about 0.8 microns to 1.9 microns. This improvement
appears to be associated with the reduction in density of a hole trap at
E sub v + 0.3 eV which has a capture cross-section in the 10 to the
minus 14th to 10 to the minus 15th sq cm range. The proximity anneal
also greatly reduced the densities of electron traps, including EL2, but
there was no direct correlation of electron trap density and improved
carrier lifetime. In other studies the effects of isoelectronic In and
Sb doping on the hole traps in Be-doped p-GaAs and electron traps in
Si-doped n-GaAs (100) grown by molecular beam epitaxy (MBE) were
investigated. The addition of 0.2 to 1 percent indium causes large
reductions of electron trap densities in layers grown at 550 C and also
reduces certain hole traps. Homojunction GaAs bipolar transistors npn
and pnp have been fabricated with base layers containing In
isoelectronic doping and are found to have significantly better
characteristics than if the In is omitted.
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官方公共微信缺陷态密度,defect densities,音标,读音,翻译,英文例句,英语词典
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1)&&defect densities
缺陷态密度
2)&&defect density
It was shown that the film surface defect density could decreased by applying deposition temperature.
结果表明:通过加温可以降低薄膜的表面粗糙度与缺陷密度大小。
The results show that the defect density is decreased great after treatment.
6μm CO2激光辐照处理,结果表明,处理后GaN薄膜的缺陷密度明显降低。
3)&&defects density
Low defects density is necessary for high quality software.
软件的缺陷是软件质量的重要因素之一,低缺陷密度的软件是高质量软件的必要条件。
4)&&high defect-density region
密度缺陷区
5)&&trap state density
陷阱态密度
6)&&defect density distribution
缺陷密度分布
补充资料：电子态密度
电子态密度
density of electronic states
　　电子态密度density of eleetronie states在电子能级为准连续分布的情况下，单位能量间隔内的电子态数目。若用△Z表示能量在E与E+△E间隔内的电子态数目，则能态密度函数的定义为N(E，一盗么器(l)如果在k空间中作出等能面，即E(k)~常数，那么在等能面E(k)一E和E(k)一E+△E之间的状态的数目就是△Z。由于状态在h空间分布是均匀的，密度为V/(2刃)“，△Z可以表示为一命jusdk(2)式中V为晶体体积，ds为k空间中体积元，积分对等能面进行，dk为两等能面间的垂直距离。△E可以表示为
△E=dk}?kE}(3)}甲、引是沿法线方向能量的改变率，代入式(2)和(1)，并考虑到电子自旋，最后可能N(E)=(4)由上式可知，在相应于}甲*川为零的点的能量附近，态密度会显示出结构。这些由于晶体的对称性和周期性而必定存在的点，称为范霍甫奇点。在范霍甫奇点处的那些态的能量，可通过光学或X射线方法测量确定。
能态密度与能带结构密切相关，是一个重要的基本函数。固体的许多特性，如电子比热、光和X射线的吸收和发射等，都与能态密度有关。
(王以铭曾令之)　　
说明：补充资料仅用于学习参考，请勿用于其它任何用途。}