&&&本征噪声
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In this dissertation, the intrinsic noise characteristic parameters for BJT/FET device, which is one of the key factors to reflect the low noise device manufacture technique, is researched.
文章主要研究了BJT／FET器件的本征噪声特性参数，它是反映低噪声器件制造工艺的关键之一。
Abstract The method used to analyze the noise of electrical amplifier is applied to analyze the intrinsic noise of semiconductor laser diode(LD). A noise equivalent circuit is established based on the LD large signal circuit model developed by R. S.Tucker.
本文将电子放大器的噪声分析方法用于半导体激光二极管（LD）的本征噪声分析中，在R．S．Tucker的大信号模型的基础上，建立了适应于通用电路分析软件计算的LD噪声等效电路模型．
A single-electron transistor(SET) can be used as a sensitive electrometer whose sensitivity is limi-ted by noise. Shot noise is the intrinsic noise which determines the limit of sensitivity of the SET.
单电子晶体管 (SET)作为灵敏静电计的灵敏度受到噪声的限制 ,其中散粒噪声 (shotnoise)是本征噪声 ,决定着单电子晶体管灵敏度的极限 .
With this filter, the signal-to-noise ratio of a MCG is improved to the intrinsic noise level.
利用它可以使心磁信号的信噪比提高到器件的本征噪声水平.
MEASUREMENT AND REVIEW OF INTRINSIC NOISE MILLIMETER SCHOTTKY MIXER DIODE
毫米波肖特基势垒混频二极管本征噪声温度测试评价
In this paper, through analyzing the spectrum of noise in the semiconductor laser, we have a detailed analysis on the different noise modules, which are the cradle of causing the output-power-fluctuation of diode laser.
本文从半导体激光器的噪声谱出发，对引起半导体激光器输出功率漂移的本征噪声、外部噪声做了详细地分析。
The noise parameters can be extracted only by using the equivalent circuit, bias condition and E_n-I_n model of the two-port.
在高频段，在Fukui的本征噪声模型中加入修正因子，后对所测的匹配50Ω噪声系数NF_(50)进行拟合，实现了对Fukui模型的修正。 通过级联噪声相关矩阵的计算提取出全部噪声参数。
With many noises such as the noise of light-source and system and some inherent noise, the stability of the FOG is not good.
但由于各种噪声如光源噪声、本征噪声和系统噪声的影响，使陀螺稳定性降低。
The noises can be classified two kinds, one is the external interference source, and another is the internal noise.
其噪声一般可以分为两类:一类是外部干扰源的影响,另一类是受到本征噪声的影响。
How to restrain the effect of quantum noise on quantum information memory will improve SNR, information security, and information capability.
二、噪声谱除了体现激光器的本征噪声外，还携带了原子信息。
PHASE NOISE OF THE THERMAL INTRINSIC FLUCTUATION IN OPTICAL FIBER
光纤中热力学本征涨落相位噪声
WHITE NOISE
and noise group (N. G.)
和噪声组(N.G.)
MEASUREMENT AND REVIEW OF INTRINSIC NOISE MILLIMETER SCHOTTKY MIXER DIODE
毫米波肖特基势垒混频二极管本征噪声温度测试评价
The intrinsic kinetic equation could be written as:
本征动力学方程为;
查询“本征噪声”译词为用户自定义的双语例句&&&&我想查看译文中含有：的双语例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法，我们为您准备了出自英文原文的大量英语例句，供您参考。&&&&&&&&&&&&&&&&&&&& In this paper, the circuit form, design method and characteristics of K-band waveguide -planar circuit GaAs FET mixer are presented. It is featured in its novel, simple structure, easy adjustment,convenient manufucturing and excellent performence. The mixer is made actually with homemade WC-603 -GaAs FET. It's conversion gain is more than 4.3dB and noise figure less than 4dB. It can be used as mixerin satellite ground station receirers. &&&&&&&&&&&&本文介绍一种K波段波导平面电路GaAs FET混频器的形式、设计方法和特点。这种电路具有结构简单、新颖、加工调试方便、性能良好等特点。利用国产WC 603型管(本征噪声系数为2.6dB,增益为6dB)所制作的实际混频器的变频增益大于4.3dB,噪声系数小于4dB,可作为卫星地面接收机的低噪声混频器部件。&&&&&&&& The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature. &&&&&&&&&&&&本文对一些毫米波肖特基势混频二极管本征噪声温度进行了测试和分析。介绍了在常温和致冷下混频二极管本征噪声的测试方法。&&&&&&&& Abstract The method used to analyze the noise of electrical amplifier is applied to analyze the intrinsic noise of semiconductor laser diode(LD). A noise equivalent circuit is established based on the LD large signal circuit model developed by R. S.Tucker. The equivalent circuit model allows a straightforward calculation of the relative intensity noise using circuit analysis programme. &&&&&&&&&&&&本文将电子放大器的噪声分析方法用于半导体激光二极管（ＬＤ）的本征噪声分析中，在Ｒ．Ｓ．Ｔｕｃｋｅｒ的大信号模型的基础上，建立了适应于通用电路分析软件计算的ＬＤ噪声等效电路模型．&nbsp&&&&&&&&相关查询:
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Intrinsic noise and discrete-time processes
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Intrinsic noise and discrete-time processes
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与Schottky noise相似词语
Schottky noise
Schottky noise的意思、解释
1.&散粒噪声
Schottky noise的用法例句
1. Using Schottky barrier diodes for D1 and D2 rather than common diodes reduces the low-level voltage on the bus, improving the noise margin. 使用肖特基二极管D1和D2，而不是普通二极管，为的是减少总线上低状态电压，改进噪声极限。 2. The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature. 本文对一些毫米波肖特基势混频二极管本征噪声温度进行了测试和分析。介绍了在常温和致冷下混频二极管本征噪声的测试方法。 3. Schottky noise 肖特基噪声
散粒噪声 4. AVALANCHE NOISE SOURCE OF SCHOTTKY BARRIER DIODE IN THE 3 mm BAND 3mm肖特基势垒二极管雪崩噪声源(window.slotbydup=window.slotbydup || []).push({
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intrinsic_level
日&-&有助降低系统成本;2) 低功率,有助延长电池寿命;3) 极低的电磁干扰,确保噪音更少、性能更可靠;4) 本征能级(intrinsic level) 及总线转换,可以.
- 基于2个网页
intrinsic Fermi level
本征费米能级
space charge region：空间电荷区intrinsic Fermi level：本征费米能级inversion layer：反型层
- 基于2个网页
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